The latest 65W ultra-thin GaN fast charging introduction
The latest 65W biscuit gallium nitride fast charging solution, this solution adopts the primary main control chip and step-down protocol chip launched by Zhirong, which is a fixed voltage output, with a secondary step-down circuit to achieve multi-port fast charging to meet consumer demand The requirement of charging multiple devices at the same time.
65W ultra-thin fast charging diagram
The 65W 3C port fast charging solution is small and flat and equipped with up to 3 USB-C ports. The measured three-dimensionality is only 81*46*12mm, the power density is about 1.42W/cm³, and the weight is about 57g. It not only meets the needs of consumers for "biscuits" chargers but also further improves the practicability of such products. For wholesalers, it greatly saves the cost of transportation and storage; for users, it is truly possible to go out with a charger. enough.
Output :
5V3A, 9V3A, 12V3A, 15V3A, 20V3.25A
PPS: 3.3-21V3.25A
I believe that friends who are concerned about the mobile phone industry have noticed that the term "gallium nitride (GaN)" appears frequently in recent years. Especially after Xiaomi released its first 65W GaN fast charging charger, the term "GaN" began to appear widely in the public's view. So, what's the difference between the charger with "GaN" and the traditional ordinary charger? Let's talk today~
Different materials are the basis of all differences
The basic material of traditional ordinary chargers is silicon, which is also a very important material in the electronic industry. However, as the limit of silicon is approaching gradually, the development of silicon has reached a certain bottleneck, and many manufacturers have begun to seek more appropriate alternatives.
In addition, with the increase of fast charging power, the volume of the fast charging head will be larger, which is very inconvenient to carry; Some high-power chargers are easy to cause the charging head to heat up after charging for a long time; Therefore, it is more urgent to find new substitute materials.
Gallium nitride (GaN) is called the third generation semiconductor material. Compared with silicon, its performance is multiplied, and it is more suitable for making high-power devices, smaller in size and higher in power density than silicon. The frequency of the GaN chip is much higher than that of silicon, which effectively reduces the volume of internal transformers and other components. At the same time, the excellent heat dissipation performance makes the layout of internal components more precise, and ultimately perfectly solves the contradiction between charging rate and portability. Gallium nitride is the substitute material we are looking for.
With the understanding of their material characteristics, the difference between gallium nitride chargers and ordinary chargers is self-evident. The gallium nitride chargers are smaller at the same power, have better heat dissipation, and can easily achieve small size and large power.
Why is a gallium nitride charger not popular?
As gallium nitride is made of new materials, the previous technology is not mature enough, and the cost is relatively high. The main cost comes from MOS power chips. However, as the technology becomes more mature, not only will the performance and experience be improved, but also the cost will slowly decline.
GaN charging head is currently mainly based on PD protocol, which can fast charge devices supporting this protocol, including MacBook (and other C-port notebooks), iPad Pro, iPhone, Switch, and other devices. With the support of gallium nitride, it is believed that the fast charging power of smartphones is expected to reach a new high.
